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 SM ISO690:2012ANEDDA, Alberto, AUTOR, Nou, SERPI, A., BURLAKOV, Igor, TIGINYANU, Ion, URSACHI, Veaceslav. Recombination in HgGaInS4 single crystals. In: Journal of Physics and Chemistry of Solids, 1997, vol. 58, pp. 325-330. ISSN 0022-3697. DOI: https://doi.org/10.1016/S0022-3697(96)00124-2 |
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  Journal of Physics and Chemistry of Solids |
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| Volumul 58 / 1997 / ISSN 0022-3697 /ISSNe 0022-3697 | ||||||
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| DOI:https://doi.org/10.1016/S0022-3697(96)00124-2 | ||||||
| Pag. 325-330 | ||||||
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Photoelectronic processes in HgGaInS4 have been studied by photoconductivity, thermally stimulated conductivity and photoluminescence. An exponential distribution of traps with a slope of 23 meV/decade as well as a further electron trap system with an activation energy of 70meV have been localized below the bottom of the conduction band. Radiative electron transitions are shown to occur mainly from exponentially distributed traps to an acceptor level characterized by an activation energy of 220 meV. |
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| Cuvinte-cheie activation energy, Band structure, Electron transitions, Mercury compounds, photoconductivity, Photoelectron spectroscopy, photoluminescence, Semiconducting gallium compounds, Thermal effects |
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