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 SM ISO690:2012LANGA, Sergiu, CARSTENSEN, Juergen, TIGINYANU, Ion, CHRISTOPHERSEN, Marc, FOLL, Helmut. Formation of tetrahedron-like pores during anodic etching of (100) oriented n-GaAs. In: Electrochemical and Solid-State Letters, 2002, vol. 5, pp. 14-17. ISSN 1099-0062. DOI: https://doi.org/10.1149/1.1423803 |
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 Electrochemical and Solid-State Letters |
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| Volumul 5 / 2002 / ISSN 1099-0062 | ||||||
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| DOI:https://doi.org/10.1149/1.1423803 | ||||||
| Pag. 14-17 | ||||||
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The morphology of porous layers obtained by electrochemical etching of (100) oriented n-GaAs substrates in an aqueous solution of HCl was studied. At low anodic current densities, up to 5 mA/cm2, pores in the form of triangular prisms grew along [removed] crystallographic directions. For larger current densities the shape of the pores did not suffer any changes at the beginning of the process, while after a definite period of time the morphology of pores changed drastically to chains of tetrahedral voids with {111} facets. |
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| Cuvinte-cheie Crystal growth, Crystal orientation, crystal structure, current density, electrochemistry, etching, hydrochloric acid, morphology, porosity, scanning electron microscopy, Substrates |
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