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 SM ISO690:2012GHIMPU, Lidia, TIGINYANU, Ion, LUPAN, Oleg, MISHRA, Yogendra Kumar, PAULOWICZ, Ingo, GEDAMU, Dawit M., COJOCARU, Ala, ADELUNG, Rainer. Effect of Al Sn - Doping on properties of zinc oxide nanostructured films grown by magnetron sputtering. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 36, 14-16 octombrie 2013, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 2013, Ediția 36, pp. 133-136. ISBN 978-146735670-1. DOI: https://doi.org/10.1109/SMICND.2013.6688111 |
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 Proceedings of the International Semiconductor Conference Ediția 36, 2013 |
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Conferința "36th International Semiconductor Conference" 36, Sinaia, Romania, 14-16 octombrie 2013 | |
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| DOI:https://doi.org/10.1109/SMICND.2013.6688111 | |
| Pag. 133-136 | |
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Metal doping in nanostructured zinc oxide is important for device applications. To obtain improved performances for practical applications, Aluminum (Al) and Tin (Sn)-doping in zinc oxide nanostructured layers were investigated. Samples were grown by magnetron sputtering and studied by X-ray diffraction (XRD), micro-Raman, scanning electron microscopy (SEM), and energy dispersive X-ray (EDX) techniques. It was observed that nanoparticles are interconnected and form porous network of individual nanoparticles. It is found clear evidence of changes of different properties after doping with aluminum or tin in zinc oxide nanostructured films grown by magnetron sputtering. |
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| Cuvinte-cheie Aluminum (Al), Device application, Energy dispersive x-ray, Individual nanoparticles, Nano-structured layer, nanostructured films, Nanostructured zinc oxides, Porous networks |
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