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 SM ISO690:2012ROZNOVAN, Yu., ARUSHANOV, Ernest, POPOV, V.. Transport properties of CdSb single crystals. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 20, 7-11 octombrie 1997, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 1997, Vol. 1, pp. 57-58. DOI: https://doi.org/10.1109/SMICND.1997.651548 |
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| Proceedings of the International Semiconductor Conference Vol. 1, 1997 |
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Conferința "International Semiconductor Conference" 20, Sinaia, Romania, 7-11 octombrie 1997 | ||||||
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| DOI:https://doi.org/10.1109/SMICND.1997.651548 | ||||||
| Pag. 57-58 | ||||||
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The results of the transport phenomena measurements on p-CdSb are presented. For the first time the phonon drag effect is investigated in this material. From the results of thermoelectric power and the Hall coefficient measurements values of the density of states effective mass at the temperature range investigated have been calculated. |
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| Cuvinte-cheie Anisotropy, Crystal orientation, Electron transport properties, Electronic density of states, Fermi level, Hall effect, phonons, Semiconducting cadmium compounds, thermoelectricity |
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