Photodarkening of amorphous chalcogenide films doped by metal impurities
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YOVU, M., SHUTOV, Serghei, REBEJA, S., KOLOMEYKO, Eduard, POPESCU, Mihai A.. Photodarkening of amorphous chalcogenide films doped by metal impurities. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 22, 5-9 octombrie 1999, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 1999, Vol. 1, pp. 359-362. DOI: https://doi.org/10.1109/SMICND.1999.810537
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Proceedings of the International Semiconductor Conference
Vol. 1, 1999
Conferința "International Semiconductor Conference"
22, Sinaia, Romania, 5-9 octombrie 1999

Photodarkening of amorphous chalcogenide films doped by metal impurities

DOI:https://doi.org/10.1109/SMICND.1999.810537

Pag. 359-362

Yovu M., Shutov Serghei, Rebeja S., Kolomeyko Eduard, Popescu Mihai A.
 
Institute of Applied Physics, Academy of Sciences of Moldova
 
 
Disponibil în IBN: 1 decembrie 2023


Rezumat

The relaxation of photodarkening in amorphous As-Se films doped by Sn, Mn, Sm and Dy was investigated. The addition of metals diminishes the photodarkening effect and the thermal photobleaching effect, especially in the case of dysprosium modifier. Metal doping contributes to the stabilization of glassy matrix with respect to light exposure and thermal treatment.

Cuvinte-cheie
Addition reactions, Amorphous films, Composition effects, Dysprosium, Heat treatment, Photochromism, Semiconductor doping, Thermal effects