| Articolul precedent |
| Articolul urmator |
 |
 143 0 |
 SM ISO690:2012KHOKHLOV, Dmitri, GALEEVA, Aleksandra, DOLZHENKO, Dmitriy, RYABOVA, Ludmila, NIKORICH, Andrey V., GANICHEV, Sergey D., DANILOV, Sergey, BELIKOV, Vasylyj. Photoconductive response of PbSnTe(In) in the terahertz spectral range. In: Proceedings of SPIE - The International Society for Optical Engineering, Ed. 17, 5 august 2009, San Diego, California. Bellingham, Washington: SPIE, 2009, Ediţia 17, Vol.7453, pp. 1-7. ISBN 9780819477439. ISSN 0277786X. DOI: https://doi.org/10.1117/12.827454 |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
 Proceedings of SPIE - The International Society for Optical Engineering Ediţia 17, Vol.7453, 2009 |
||||||
|
Conferința " Nanotechnology" 17, San Diego, California, Statele Unite ale Americii, 5 august 2009 | ||||||
|
||||||
| DOI:https://doi.org/10.1117/12.827454 | ||||||
| Pag. 1-7 | ||||||
|
||||||
 Descarcă PDF |
||||||
| Rezumat | ||||||
We have analyzed photoconductivity in PbSnTe(In) under the action of ∼100 ns long terahertz laser pulses with the wavelength 90 - 500 μm in the temperature range 4.2-300 K. Strong photoresponse has been observed at all wavelengths used. Positive persistent photoconductivity is observed at T < 10 K, whereas negative non-persistent photoresponse prevails at higher temperatures T ∼?25 K. Specific features of photoconductivity are discussed. |
||||||
| Cuvinte-cheie doping, Narrow gap semiconductors, photoconductivity, Terahertz |
||||||
|
|
|
|
