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 SM ISO690:2012TSIULYANU , Dumitru, MARIAN, Svetlana, MIRON, Valeriu, POTJE-KAMLOTH, Karin, LIESS, Hans Dieter. Chalcogenide semiconductor based sensor for fast NO2 detection. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 23, 10-14 octombrie 2000, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 2000, Vol. 2, pp. 377-380. DOI: https://doi.org/10.1109/SMICND.2000.889114 |
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 Proceedings of the International Semiconductor Conference Vol. 2, 2000 |
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Conferința "International Semiconductor Conference" 23, Sinaia, Romania, 10-14 octombrie 2000 | ||||||
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| DOI:https://doi.org/10.1109/SMICND.2000.889114 | ||||||
| Pag. 377-380 | ||||||
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For the first time it is shown that thin films based on tellurum alloys exhibit high sensitivity to nitrogen dioxide at room temperature. The resistance of the films decrease reversibly in the presence of NO2. Sensitivity of the device depends on gas concentration and is better at concentrations less than 3ppm. Response time is considerably short being in the range of 2-3min. |
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| Cuvinte-cheie High temperature operations, nitrogen compounds, Solid electrolytes, thin films |
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