Controlling the properties of electrodeposited ZnO nanowire arrays for light emitting diode, photodetector and gas sensor applications
Închide
Articolul precedent
Articolul urmator
107 0
SM ISO690:2012
PAUPORTE, Thierry, LUPAN, Oleg, VIANA, Bruno, CHOW, Lee, TCHERNYCHEVA, Maria. Controlling the properties of electrodeposited ZnO nanowire arrays for light emitting diode, photodetector and gas sensor applications. In: Proceedings of SPIE - The International Society for Optical Engineering, Ed. 5, 2-5 februarie 2014, San Francisco, California. San Francisco, California: SPIE, 2014, Ediţia 5, Vol.8987, pp. 1-8. ISBN 9780819499004. ISSN 0277786X. DOI: https://doi.org/10.1117/12.2039839
EXPORT metadate:
Google Scholar
Crossref
CERIF

DataCite
Dublin Core
Proceedings of SPIE - The International Society for Optical Engineering
Ediţia 5, Vol.8987, 2014
Conferința "Oxide Based Materials and Devices"
5, San Francisco, California, Statele Unite ale Americii, 2-5 februarie 2014

Controlling the properties of electrodeposited ZnO nanowire arrays for light emitting diode, photodetector and gas sensor applications

DOI:https://doi.org/10.1117/12.2039839

Pag. 1-8

Pauporte Thierry1, Lupan Oleg12, Viana Bruno1, Chow Lee3, Tchernycheva Maria4
 
1 Institut de Recherche de Chimie Paris,
2 Technical University of Moldova,
3 University of Central Florida,
4 Univ. Paris-Sud, Institut d'Electronique Fondamentale
 
 
Disponibil în IBN: 28 noiembrie 2023


Rezumat

Electrochemical deposition (ECD) is a versatile technique for the preparation of ZnO nanowires (NWs) and nanorods (NRs) with high structural and optical quality. The bandgap of the ZnO NWs can be engineered by doping. Depending on the doping cation and concentration, the bandgap is increased or decreased in a controlled manner. The NW arrays have been grown on various substrates. The epitaxial growth on single-crystal conducting substrates has been demonstrated. By using p-type GaN layers, heterostructures have been fabricated with a high rectifying electrical behavior. They have been integrated in low-voltage LEDs emitting in the UV or in the visible region depending on the NW composition. For visible-blind UV-photodetector application, ZnO NW ensembles, electrochemically grown on F:SnO2, have been contacted on their top with a transparent graphene sheet. The photodetector had a responsivity larger than 104 A/W at 1V in the near-UV range. ECD ZnO NWs have also been isolated and electrically connected on their both ends by Al contacts. The obtained nanodevice, made of an individual NW, was shown to be a H2 gas sensor with a high selectivity and sensitivity. Moreover, it was shown that Cd-doping of ZnO NWs significantly improved the performance of the sensor

Cuvinte-cheie
doping, Electrodeposition, light emitting diodes, nanosensor, Visible-blind UV-Photodetector, ZnO nanowires