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 SM ISO690:2012SLOBODCHIKOV, Semen, RUSU, Emil, ARABADJI, P, PURICA, Munitzer, BUDIANU, Elena. Optical and electrical properties of the CdS/InP heterostructures solar cells. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 27, 4-6 octombrie 2004, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 2004, Vol. 1, Ediția 27, pp. 221-224. DOI: https://doi.org/10.1109/SMICND.2004.1402846 |
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 Proceedings of the International Semiconductor Conference Vol. 1, Ediția 27, 2004 |
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Conferința "27th International Semiconductor Conference" 27, Sinaia, Romania, 4-6 octombrie 2004 | ||||||
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| DOI:https://doi.org/10.1109/SMICND.2004.1402846 | ||||||
| Pag. 221-224 | ||||||
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Technological procedures of solar cells fabrication based on n +-CdS/p-p+-InP heterostructures are presented. The conversion efficiency under AM 1.5 illumination condition of the obtained solar cell was ∼12,6% at Isc = 16mA/cm2, Uoc = (0.74-0.78) V. The charge transport mechanism in solar cells in the temperature range of (100-300) K has been investigated. It has been established that direct current is determined either by charge carrier tunneling through local centres (low temperature) or by recombination processes in the charge depleted region. The heterojunction breakdown mechanism is determined by charge carrier tunneling processes. |
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| Cuvinte-cheie charge carriers, Charge transfer, Electric properties, Electron tunneling, Heterojunctions, optical properties |
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