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 SM ISO690:2012TSIULYANU, A., TSIULYANU , Dumitru, LIESS, Hans Dieter. Effect of temperature on the NO2 sensing properties of tellurium based films. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 27, 4-6 octombrie 2004, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 2004, Vol. 2, Ediția 27, pp. 429-432. |
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 Proceedings of the International Semiconductor Conference Vol. 2, Ediția 27, 2004 |
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Conferința "27th International Semiconductor Conference" 27, Sinaia, Romania, 4-6 octombrie 2004 | ||||||
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| Pag. 429-432 | ||||||
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Influence of temperature on the electrical and sensing properties toward NO2 of tellurium based films were investigated, Temperature - dependent electrical conductivity is strongly affected by presence of an NO 2 environment. The sensitivity toward NO2, being controlled by gas concentration, decreases with operating temperature increase. On the other hand, the increase of operating temperature leads to a reduction of response - recovery times. The results are discussed taking into consideration the contributions of grain boundary as well as grain bulk and surface resistance to the total conductivity. It is assumed the surface, including grain boundary, hole - enriched region is formed as a result of dangling bond chalcogen's lone-pair electron interaction. Chemisorption of NO2 molecules is accompanied by hole enrichment of the surface and grain boundary region, due to interaction of these molecules with lone-pair electrons. |
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| Cuvinte-cheie Chemical bonds, Electric conductivity, Grain boundaries, nitrogen oxides, reduction, Semiconducting films, sensitivity analysis, Tellurium |
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