Photoluminescence in CdIn2O4 and CdGa 2O4
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ZHITAR, V., MUNTEAN, Ştefan, , , ARAMĂ, Efim, SHEMYAKOVA, Tatiana. Photoluminescence in CdIn2O4 and CdGa 2O4. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 36, 3-5 octombrie 2005, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 2005, Vol. 2, Ediția 28, pp. 301-304. ISBN 0780392140, 978-078039214-4. DOI: https://doi.org/10.1109/SMICND.2005.1558784
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Proceedings of the International Semiconductor Conference
Vol. 2, Ediția 28, 2005
Conferința "28th International Semiconductor Conference"
36, Sinaia, Romania, 3-5 octombrie 2005

Photoluminescence in CdIn2O4 and CdGa 2O4

DOI:https://doi.org/10.1109/SMICND.2005.1558784

Pag. 301-304

Zhitar V.1, Muntean Ştefan1, 1, Aramă Efim2, Shemyakova Tatiana1
 
1 Institute of Applied Physics, Academy of Sciences of Moldova,
2 ”Nicolae Testemițanu” State University of Medicine and Pharmacy
 
 
Disponibil în IBN: 22 noiembrie 2023


Rezumat

Crystalline samples of CdIn2O4 and CdGa 2O4 of cubic syngony have been prepared using a method similar to that commonly used for preparation of ceramic materials. Photoluminescence spectra measured at temperature 77 and 300 K under Ar laser excitation consist of intensive narrow red bands generated due to recombination involving centers defined by the intrinsic defect structure. 

Cuvinte-cheie
Ceramic materials, crystal structure, Crystalline materials, defects, Laser theory, photoluminescence