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<identifier identifierType='DOI'>10.1002/(SICI)1521-396X(199910)175:2<615::AID-PSSA615>3.0.CO;2-N</identifier>
<creators>
<creator>
<creatorName>Iovu, M.S.</creatorName>
<affiliation>Institutul de Fizică Aplicată al AŞM, Moldova, Republica</affiliation>
</creator>
<creator>
<creatorName>Sîrbu, N.N.</creatorName>
<affiliation>Institutul de Fizică Aplicată al AŞM, Moldova, Republica</affiliation>
</creator>
<creator>
<creatorName>Shutov, S.D.</creatorName>
<affiliation>Institutul de Fizică Aplicată al AŞM, Moldova, Republica</affiliation>
</creator>
<creator>
<creatorName>Vasiliev, I.A.</creatorName>
<affiliation>Institutul de Fizică Aplicată al AŞM, Moldova, Republica</affiliation>
</creator>
<creator>
<creatorName>Rebeja, S.Z.</creatorName>
<affiliation>Institutul de Fizică Aplicată al AŞM, Moldova, Republica</affiliation>
</creator>
<creator>
<creatorName>Colomeico, E.P.</creatorName>
<affiliation>Institutul de Fizică Aplicată al AŞM, Moldova, Republica</affiliation>
</creator>
<creator>
<creatorName>Popescu, M.</creatorName>
<affiliation>National Institute of Materials Physics Bucharest-Magurele, România</affiliation>
</creator>
<creator>
<creatorName>Sava, F.</creatorName>
<affiliation>National Institute of Materials Physics Bucharest-Magurele, România</affiliation>
</creator>
</creators>
<titles>
<title xml:lang='en'>Spectroscopical study of amorphous AsSe:Sn films</title>
</titles>
<publisher>Instrumentul Bibliometric National</publisher>
<publicationYear>1999</publicationYear>
<relatedIdentifier relatedIdentifierType='ISSN' relationType='IsPartOf'>0031-8965</relatedIdentifier>
<subjects>
<subject>Absorption spectroscopy</subject>
<subject>Amorphous films</subject>
<subject>Composition effects</subject>
<subject>Energy gap</subject>
<subject>Impurities</subject>
<subject>Light absorption</subject>
<subject>Light reflection</subject>
<subject>Semiconducting selenium compounds</subject>
<subject>tin</subject>
</subjects>
<dates>
<date dateType='Issued'>1999-10-01</date>
</dates>
<resourceType resourceTypeGeneral='Text'>Journal article</resourceType>
<descriptions>
<description xml:lang='en' descriptionType='Abstract'><p>The effect of tin impurities on optical spectra of thermally deposited AsSe films doped with Sn (1 to 10 at%) was studied in a wide energy interval from 0.8 to 6.2 eV by combination of reflection, absorption, photoresponse and photocapacitance spectroscopies. Most changes have been detected at the fundamental absorption edge over which a correlation between the band tail width and optical gap is demonstrated for various tin concentrations. The tin induced absorption band associated with a localized energy level at about 1.6 eV in the gap was revealed. Distinct variations in the reflectivity spectra of the fundamental absorption region suggest a tin assistance in the formation of the valence band states of the material.</p></description>
</descriptions>
<formats>
<format>application/pdf</format>
</formats>
</resource>