| Conţinutul numărului revistei |
| Articolul precedent |
| Articolul urmator |
 111 0 |
 SM ISO690:2012LANGA, Sergiu, CHRISTOPHERSEN, Marc, CARSTENSEN, Juergen, TIGINYANU, Ion, FOLL, Helmut. Electrochemical pore etching in Ge. In: Physica Status Solidi (A) Applied Research, 2003, vol. 195, pp. 4-6. ISSN 0031-8965. DOI: https://doi.org/10.1002/pssa.200306456 |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
 Physica Status Solidi (A) Applied Research |
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| Volumul 195 / 2003 / ISSN 0031-8965 /ISSNe 1521-396X | ||||||
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| DOI:https://doi.org/10.1002/pssa.200306456 | ||||||
| Pag. 4-6 | ||||||
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| Rezumat | ||||||
Nucleation and growth of electrochemically obtained pores on (111) and (100) oriented n-Ge in different electrolytes was investigated. On rough surfaces pore density increases as the current density increases, whereas on smooth surfaces the situation is inverse, i.e., the pore density increases as the current density decreases. The macropores show strong anisotropic features with a cone-like shape. This can be understood if the passivation of the pore walls in Ge is less pronounced as in the case of Si or HI-V compounds, but strongly anisotropic. |
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| Cuvinte-cheie Anisotropy, Crystal orientation, current density, electrochemistry, Electrolytes, etching, Nucleation, Passivation, porosity, Semiconductor growth, surface roughness |
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