| Conţinutul numărului revistei |
| Articolul precedent |
| Articolul urmator |
 76 0 |
 SM ISO690:2012, , CHRISTOPHERSEN, Marc, CARSTENSEN, Juergen, TIGINYANU, Ion, FOLL, Helmut. Single crystalline 2D porous arrays obtained by self organization in n-InP. In: Physica Status Solidi (A) Applied Research, 2003, vol. 197, pp. 77-82. ISSN 0031-8965. DOI: https://doi.org/10.1002/pssa.200306471 |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
 Physica Status Solidi (A) Applied Research |
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| Volumul 197 / 2003 / ISSN 0031-8965 /ISSNe 1521-396X | ||||||
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| DOI:https://doi.org/10.1002/pssa.200306471 | ||||||
| Pag. 77-82 | ||||||
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| Rezumat | ||||||
Self organization is a rather common phenomenon during pore formation in III-V semiconductors. The so called tetrahedron-like pores, the domains of crystallographically oriented pores in n-GaAs, or the macroscopic voltage oscillations in n-InP at high constant current densities are examples of a self organization process. In this paper we will discuss two-dimensional arrays of pores in n-InP with the unique property that they may form a single crystal as a result of a self organization process. The reasons for this long range order and its dependence on the etching conditions will be discussed. |
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| Cuvinte-cheie current density, electrochemistry, Electrodes, etching, porous materials, Semiconducting gallium arsenide, Semiconducting indium phosphide, single crystals |
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