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 SM ISO690:2012IASENIUC, Oxana, YOVU, M.. Steady-state and transient photocurrents of As-S-Sb-Te amorphous thin films. In: Chalcogenide Letters, 2023, vol. 20, pp. 725-731. ISSN 1584-8663. DOI: https://doi.org/10.15251/CL.2023.2010.725 |
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  Chalcogenide Letters |
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| Volumul 20 / 2023 / ISSN 1584-8663 | ||||||
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| DOI:https://doi.org/10.15251/CL.2023.2010.725 | ||||||
| Pag. 725-731 | ||||||
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In the present work some nanostructured quaternary chalcogenides of the As-S-Sb-Te system have been investigated by a photoelectric method. The spectral distribution of steady-state photocurrent Iph=(λ) and the relaxation curves of photocurrent Iph=(t) were registered at positive and negative polarity of the applied voltage to the top Al illuminated electrode. In the spectral distribution of steady-state photocurrent, for the amorphous thin films As1.17S2.7Sb0.83Te0.40, As1.04S2.4Sb0.96Te0.60, As0.63S2.7Sb1.37Te0.30, and As0.56S2.4Sb1.44Te0.60 in the wavelength range λ=0.50÷0.92 mm (2.48÷1.35 eV) some maxima were detected, which are the result of the presence of binary clusters As2S3, Sb2S3 and Sb2S3. The photo-voltaic method was used to obtain the value of the band gap width, which was about Eg =1.41 eV. |
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| Cuvinte-cheie amorphous thin films, Steady-state photoconductivity, Transient photocurrents |
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Dublin Core Export
<?xml version='1.0' encoding='utf-8'?> <oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'> <dc:creator>Iaseniuc, O.V.</dc:creator> <dc:creator>Iovu, M.S.</dc:creator> <dc:date>2023-10-10</dc:date> <dc:description xml:lang='en'><p>In the present work some nanostructured quaternary chalcogenides of the As-S-Sb-Te system have been investigated by a photoelectric method. The spectral distribution of steady-state photocurrent I<sub>ph</sub>=(λ) and the relaxation curves of photocurrent I<sub>ph</sub>=(t) were registered at positive and negative polarity of the applied voltage to the top Al illuminated electrode. In the spectral distribution of steady-state photocurrent, for the amorphous thin films As<sub>1.17</sub>S<sub>2.7</sub>Sb<sub>0.83</sub>Te<sub>0.40</sub>, As<sub>1.04</sub>S<sub>2.4</sub>Sb<sub>0.96</sub>Te<sub>0.60</sub>, As<sub>0.63</sub>S<sub>2.7</sub>Sb<sub>1.37</sub>Te<sub>0.30</sub>, and As<sub>0.56</sub>S<sub>2.4</sub>Sb<sub>1.44</sub>Te<sub>0.60</sub> in the wavelength range λ=0.50÷0.92 mm (2.48÷1.35 eV) some maxima were detected, which are the result of the presence of binary clusters As<sub>2</sub>S<sub>3</sub>, Sb<sub>2</sub>S<sub>3</sub> and Sb<sub>2</sub>S<sub>3</sub>. The photo-voltaic method was used to obtain the value of the band gap width, which was about E<sub>g</sub> =1.41 eV.</p></dc:description> <dc:identifier>10.15251/CL.2023.2010.725</dc:identifier> <dc:source>Chalcogenide Letters () 725-731</dc:source> <dc:subject>amorphous thin films</dc:subject> <dc:subject>Steady-state photoconductivity</dc:subject> <dc:subject>Transient photocurrents</dc:subject> <dc:title>Steady-state and transient photocurrents of As-S-Sb-Te amorphous thin films</dc:title> <dc:type>info:eu-repo/semantics/article</dc:type> </oai_dc:dc>
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