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 SM ISO690:2012ARUSHANOV, Ernest, SIEBENTRITT, Susanne, SCHEDEL-NIEDRIG, Thomas, LUX-STEINER, Martha Ch. H.. Hopping conductivity in p-CuGaSe2 films. In: Journal of Applied Physics, 2006, vol. 100, pp. 1-4. ISSN 0021-8979. DOI: https://doi.org/10.1063/1.2338600 |
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  Journal of Applied Physics |
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| Volumul 100 / 2006 / ISSN 0021-8979 /ISSNe 1089-7550 | ||||||
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| DOI:https://doi.org/10.1063/1.2338600 | ||||||
| Pag. 1-4 | ||||||
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The results of resistivity measurements on p-type CuGaSe2 films are presented and analyzed within the framework of different hopping conductivity models. Both the Mott [N. Mott and E. A. Davies, Electron Processes in Non-Crystalline Materials (Clarendon, Oxford, 1979); N. F. Mott, Metal-Insulator Transitions (Taylor & Francis, London, 1990)] and the Shklovski-Efros [Electronic Properties of Doped Semiconductors (Springer, Berlin, 1984)] regimes of variable-range hopping are observed. The values of the characteristic and transition temperatures as well as the complete set of parameters describing the properties of the localized holes (the localization radius, the dielectric permeability, the width of the Coulomb gap, and the values of density of states at the Fermi level) are determined. |
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| Cuvinte-cheie Engineering controlled terms Dielectric properties, Doping (additives), Fermi level, magnetic permeability, Metal insulator transition, Semiconductor materials, Superconducting transition temperature, Thin films Engineering uncontrolled terms Coulomb gap, Hopping conductivity, Non Crystalline Materials Engineering main heading Copper compounds |
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