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 SM ISO690:2012LANGA, Sergiu, TIGINYANU, Ion, MONAICO, Eduard, FOLL, Helmut. Porous II-VI vs. porous III-V semiconductors. In: Physica Status Solidi (C) Current Topics in Solid State Physics, 2011, vol. 8, pp. 1792-1796. ISSN 1862-6351. DOI: https://doi.org/10.1002/pssc.201000102 |
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 Physica Status Solidi (C) Current Topics in Solid State Physics |
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| Volumul 8 / 2011 / ISSN 1862-6351 /ISSNe 1610-1642 | ||||||
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| DOI:https://doi.org/10.1002/pssc.201000102 | ||||||
| Pag. 1792-1796 | ||||||
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In this work a morphological comparison of porous structures obtained by means of electrochemical etching in II-VI (ZnSe, CdSe) and III-V (InP, GaAs, GaP) semiconductors is presented. It is shown that in III-V semiconductors current-line and crystallographically oriented pores can be grown, whereas in II-VI semiconductors only current line oriented pores can form. The lack of crystallographically oriented pores in II-VI is a possible reason why no long range order for the current line oriented pores was observed in these materials up to now. |
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| Cuvinte-cheie Anodisation, electrochemistry, II-VI, III-V, morphology, Porous |
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