Conţinutul numărului revistei |
Articolul precedent |
Articolul urmator |
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SM ISO690:2012 LAIHO, Reino, LASHKUL, Alexander V., LISUNOV, Konstantin, LÄHDERANTA, Erkki, SHAKHOV, Mikhail, ZAKHVALINSKII, Vasilii. Mechanisms of hopping conductivity of p-CdSb:Ni in magnetic field. In: Physica Status Solidi (C) Current Topics in Solid State Physics, 2009, vol. 6, pp. 1332-1335. ISSN 1862-6351. DOI: https://doi.org/10.1002/pssc.200881181 |
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Physica Status Solidi (C) Current Topics in Solid State Physics | |
Volumul 6 / 2009 / ISSN 1862-6351 /ISSNe 1610-1642 | |
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DOI:https://doi.org/10.1002/pssc.200881181 | |
Pag. 1332-1335 | |
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Rezumat | |
Hopping conductivity in single crystals of the group II-V ani-sotropic diluted magnetic semiconductor p-CdSb:Ni, oriented along the [100] (# 1), [010] (# 2) and [001] (# 3) axes, is investigated in zero and pulsed magnetic fields B. At B = 0 the Mott variable-range hopping (VRH) conductivity is observed in # 2, and the Shklovskii-Efros VRH conductivity in # 1 and # 3 at T ≤ 2.5 K. However, in weak fields of B < 6 T temperature dependence of the resistivity gives evidence for the Mott VRH conductivity in # 1 below ∼ 4.2 K, whereas in # 2 and # 3 the nearest-neighbour hopping (NNH) conductivity is observed between 3-4.2 K and between 1.5-4.2 K, respectively. Eventually, in high magnetic fields of B up to ∼ 15 T and T ≤ 4.2 K only the NNH conductivity is observed in all investigated samples. The analysis of the resistivity data yields the set of microscopic parameters, such as the localization radius, the widths of the Coulomb gap and of the impurity band, the density of the localized states and the anisotropy coefficients, as well as the values of the acceptor concentration and the dielectric permittivity. |
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Cuvinte-cheie Crystal impurities, Magnetic fields, Magnetic semiconductors |
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