Time-dependent evolution of crystal lattice, defects and impurities in CdIn2S4and GaP
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PYSHKIN, Serghei, BALLATO, John, BASS, Michael A., CHUMANOV, George, TURRI, Giorgio. Time-dependent evolution of crystal lattice, defects and impurities in CdIn2S4and GaP. In: Physica Status Solidi (C) Current Topics in Solid State Physics, 2009, vol. 6, pp. 1112-1115. ISSN 1862-6351. DOI: https://doi.org/10.1002/pssc.200881177
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Physica Status Solidi (C) Current Topics in Solid State Physics
Volumul 6 / 2009 / ISSN 1862-6351 /ISSNe 1610-1642

Time-dependent evolution of crystal lattice, defects and impurities in CdIn2S4and GaP

DOI:https://doi.org/10.1002/pssc.200881177

Pag. 1112-1115

Pyshkin Serghei1, Ballato John2, Bass Michael A.3, Chumanov George4, Turri Giorgio3
 
1 Institute of Applied Physics, Academy of Sciences of Moldova,
2 Center for Opical Materials Science and Engineering Technologies, Clemson University,
3 University of Central Florida,
4 Universitatea Clemson
 
 
Disponibil în IBN: 26 octombrie 2023


Rezumat

We demonstrate that in III-V and ternary compounds the natural stimuli for ordered distribution of impurities along crystal nodes and interstitials, host atoms and inherent vacancies in right lattice positions prevail over the others which could lead to a heterogenic distribution. The result is obtained in the crystals, prepared in 1963-1977, due to each 10-15 years monitoring of their optical and mechanical properties. Here we have summarized the results of the 2005-2008 monitoring and compare them with the earlier obtained data. We show that the partly inverse spinel CdIn2S4 turns into the perfect normal spinel, while in GaP the impurity ordering leads to the formation of a new type of crystal lattices. Periodically disposed impurities and inherent structural defects modify, improve and stabilize properties of the crystals. New luminescent phenomena of these crystals, including stimulated emission and "hot" luminescence have been discovered. The existing technologies help us to reproduce these naturally ordered structures and to apply them for new generation of optoelectronic devices. 

Cuvinte-cheie
Crystal defects, Crystal lattices, Crystals, Gallium alloys, lead compounds, Luminescence, mechanical properties, optical properties, Optoelectronic devices