Photoconductivity of the Pb0.75Sn0.25Te:In alloy in an alternating electric field
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KOZHANOV, Alexander, NIKORICH, Andrey V., RYABOVA, Ludmila, KHOKHLOV, Dmitri, DMITRIEV, Alexey, SHKLOVER, Valery. Photoconductivity of the Pb0.75Sn0.25Te:In alloy in an alternating electric field. In: Semiconductors, 2007, vol. 41, pp. 663-665. ISSN 1063-7826. DOI: https://doi.org/10.1134/S1063782607060097
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Semiconductors
Volumul 41 / 2007 / ISSN 1063-7826

Photoconductivity of the Pb0.75Sn0.25Te:In alloy in an alternating electric field

DOI:https://doi.org/10.1134/S1063782607060097

Pag. 663-665

Kozhanov Alexander1, Nikorich Andrey V.2, Ryabova Ludmila1, Khokhlov Dmitri1, Dmitriev Alexey1, Shklover Valery3
 
1 Lomonosov Moscow State University,
2 Institute of Applied Physics, Academy of Sciences of Moldova,
3 Swiss Federal Institute of Technology in Zurich
 
 
Disponibil în IBN: 17 octombrie 2023


Rezumat

Kinetics of variations in the components of total impedance for single-crystal Pb0.75Sn0.25Te:In samples is investigated upon switching on and switching off of the illumination source at temperature 4.2 K and frequency 106 Hz. The calculation carried out in the context of representation of equivalent circuits showed that the parameters of a parallel R p C p chain, which approximates the sample behavior, correlate strictly. In the region of low resistances R p , the values of C p increase abruptly following the law C p ∝ R p -2 . It is of no importance what method of decreasing the resistance is used-heating of the sample or its illumination at low temperature. The obtained results were analyzed taking into account the contribution of the impurity subsystem to conductivity and the possible manifestation of Maxwell-Wagner-type effects. 

Cuvinte-cheie
thin films, photoconductivity, thermoelectric