Electrical Properties of the (Copper, Dysprosium)-Containing Complex Compound
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2023-11-10 16:01
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SEMENOV, Andriy, MARTYNIUK, Volodymyr, EVSEEVA, Maria, OSADCHUK, Oleksandr, SEMENOVA, Olena, YUSHCHENKO, Tetyana. Electrical Properties of the (Copper, Dysprosium)-Containing Complex Compound. In: IFMBE Proceedings: Nanotechnologies and Biomedical Engineering, Ed. 6, 20-23 septembrie 2023, Chişinău. Chişinău: Springer Science and Business Media Deutschland GmbH, 2023, Ediția 6, p. 53. ISBN 978-9975-72-773-0..
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IFMBE Proceedings
Ediția 6, 2023
Conferința "6th International Conference on Nanotechnologies and Biomedical Engineering"
6, Chişinău, Moldova, 20-23 septembrie 2023

Electrical Properties of the (Copper, Dysprosium)-Containing Complex Compound


Pag. 53-53

Semenov Andriy1, Martyniuk Volodymyr1, Evseeva Maria2, Osadchuk Oleksandr1, Semenova Olena1, Yushchenko Tetyana2
 
1 Vinnytsia National Technical University,
2 National Pirogov Memorial Medical University, Vinnytsya
 
 
Disponibil în IBN: 11 octombrie 2023


Rezumat

A new semiconductor material tetrakis-μ3-(methoxy)(methanol)-pentakis(acetylacetonato) (tricopper(II), dysprosium(III)) (I) was synthesized, with the following composition: [Cu3Dy(AA)5(OCH3)4CH3OH], where HAA = H3C–C(O)–CH2–C(O)–CH3. By data of the elemental analysis and physic-chemical research methods, the obtained complex compound (I) was established to contain atoms of copper (II) and dysprosium (III) in a ratio Cu : Dy = 3 : 1, and its composition was established to correspond to a gross formula: Cu3DyО15C30Н51. The electrical conductivity of the obtained material was measured in compressed form. The following parameters were calculated for the complex compound (I): the number of valence electrons in one molecule was 276; the mass of one molecule was 166.777∙10-20 kg; the total number of molecules in a cylindrical sample with a 0.138 g mass and a 19.72∙10-9 m3 volume was 8.274∙1013 molecules. The resistivity of the pressed sample decreases from 9∙1010 to 7∙104 Ohm∙cm in a 303 ~ 413 K temperature range. This confirms that the synthesized compound is a semiconductor with a bandgap of 1.38 eV. The conductive properties of the complex compound as a heat-sensitive element were studied. An experimental sample of compressed material with geometric sizes of 1·10-3m×0.5·10-3m×0.5·10-3m was employed for investigations.