Gallium selenide is a layered crystal with outstanding nonlinear optical properties. Due to layered structure and weak van der Waals bonds it is perspective as two dimension material. GaSe possesses two-phonon absorption and can be uses in THz diapason. Investigation of optical properties is important for further development of optoelectronic devices on its base. In this work photoluminescence, reflection and absorption spectra of GaSe single crystals were studied in a wide temperature range (10 – 300 K). The presence of series of excitonic levels in the region E > E_g was shown. At excitation by 448 nm laser of GaSe crystal electrons were resonantly excited from V₁(Γ₁) band to C₁(Γ₆) and C₂(Γ₅) bands. The luminescence from excitonic levels (n_A = 1, 2 … 5) of conduction band C₁(Γ₆) to valence band V₁(Γ₁) was observed. Recombination from excitonic level of C₁(Γ₆) band to V₂ and V₃ bands (maxima n^B = 1–2.1751 eV and n^B = 2–2.2222 eV) and to V₄ and V₅ bands (maxima n^C = 1 – 2.311 eV and n^C = 2–2.350 eV) was observed. Luminescence maxima n^D = 1 (2.399 eV) and n^D = 2 (2.434 eV) attributed to transitions between C₁ – V₆, V₇ bands and E₃ maximum caused by recombination C₂ – V₁ were found out. A model of energy bands responsible for observed transitions was suggested.