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 SM ISO690:2012KHALLAF, Hani, CHAI, Guangyu, LUPAN, Oleg, CHOW, Lee, HEINRICH, Helge H., PARK, Sang Hoon, SCHULTE, Alfons. In-situ boron doping of chemical-bath deposited CdS thin films. In: Physica Status Solidi (A) Applications and Materials Science, 2009, vol. 206, pp. 256-262. ISSN 1862-6300. DOI: https://doi.org/10.1002/pssa.200824290 |
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  Physica Status Solidi (A) Applications and Materials Science |
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| Volumul 206 / 2009 / ISSN 1862-6300 | ||||||
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| DOI:https://doi.org/10.1002/pssa.200824290 | ||||||
| Pag. 256-262 | ||||||
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In-situ boron doping of CdS using chemical-bath deposition (CBD) is reported. The effect of B doping on optical properties, as well as electrical properties, crystal structure, chemistry, and morphology of CdS films is studied. We present a successful approach towards B doping of CdS using CBD, where a resistivity as low as 1.7 × 10 -2 Ωcm and a carrier density as high as 1.91 × 10 19 cm -3 were achieved. The bandgap of B-doped films was found to slightly decrease as the [B]/[Cd] ratio in the solution increases. X-ray diffraction studies showed B 3+ ions likely enter the lattice substitutionally. A phase transition, due to annealing, as well as induced lattice defects, due to B doping, were detected by microRaman spectroscopy and transmission electron microscopy. The chemistry and morphology of films were unaffected by B doping. |
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| Cuvinte-cheie boron, cadmium, Cadmium compounds, Crystal chemistry, crystal structure, Data storage equipment, Electric properties, optical properties, Phase transitions, transmission electron microscopy |
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