| Conţinutul numărului revistei |
| Articolul precedent |
| Articolul urmator |
 |
 104 0 |
 SM ISO690:2012LEHMANN, Sebastian, MARRON, David Fuertes, TOVAR, Michael, TOMM, Yvonnne, WOLF, Christian, SCHORR, S., SCHEDEL-NIEDRIG, Thomas, ARUSHANOV, Ernest, LUX-STEINER, Martha Ch. H.. A structural study on the CuGaSe 2-related copper-poor materials CuGa 3Se 5 and CuGa 5Se 8: Thin-film vs. bulk material. In: Physica Status Solidi (A) Applications and Materials Science, 2009, vol. 206, pp. 1009-1012. ISSN 1862-6300. DOI: https://doi.org/10.1002/pssa.200881221 |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
  Physica Status Solidi (A) Applications and Materials Science |
|
| Volumul 206 / 2009 / ISSN 1862-6300 | |
|
|
| DOI:https://doi.org/10.1002/pssa.200881221 | |
| Pag. 1009-1012 | |
 Descarcă PDF |
|
| Rezumat | |
Polycrystalline samples of CuGaSe 2-related defect compounds (DC) have been prepared by Chemical Close-Spaced Vapour Transport (CCSVT) (thin films) and elemental synthesis (powder) respectively. In the latter case a homogenisation step was introduced during the preparation, including mechanical intermixing and adjacent-heat treatment after the main reaction. Following this route we assured conditions "close to" thermodynamic equilibrium. The influence of the annealing temperature on the lattice parameters a 0 and c 0, as well as the cation distribution, was investigated. By means of X-ray and neutron diffraction analysis the structural properties of the Cu-Ga-Se based DCs have been determined and a new structural model has been derived. Finally the structural parameters of CCSVT-grown thin-film material were correlated with findings for bulk material samples which were intentionally prepared off-equilibrium. |
|
| Cuvinte-cheie chemical compounds, Copper compounds, gallium, Materials handling equipment, Model structures, Semiconducting selenium compounds, Thin film devices, X ray diffraction analysis |
|
|
|
|
|
