Conţinutul numărului revistei |
Articolul precedent |
Articolul urmator |
128 0 |
SM ISO690:2012 ARUSHANOV, Ernest, TOMM, Yvonnne, IVANENKO, L., LANGE, Horst. Hole Mobility in Cr-Doped p-Type β-FeSi2 Single Crystals. In: Physica Status Solidi (B) Basic Research, 1998, vol. 210, pp. 187-194. ISSN 0370-1972. DOI: https://doi.org/10.1002/(SICI)1521-3951(199811)210:1<187::AID-PSSB187>3.0.CO;2-F |
EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
Physica Status Solidi (B) Basic Research | ||||||
Volumul 210 / 1998 / ISSN 0370-1972 | ||||||
|
||||||
DOI:https://doi.org/10.1002/(SICI)1521-3951(199811)210:1<187::AID-PSSB187>3.0.CO;2-F | ||||||
Pag. 187-194 | ||||||
|
||||||
Descarcă PDF | ||||||
Rezumat | ||||||
The analysis of mobility in Cr-doped p-type β-FeSi2 single crystals is performed taking into account acoustic, non-polar and polar optical phonon scattering, scattering by ionised impurities and space charge scattering. The dominant scattering mechanisms are determined. The value of the valence band deformation potential is estimated. The temperature dependence of the Hall coefficient is explained in the limit of a two acceptor-one donor model. The value of the activation energy of the deep acceptors, the concentration of the shallow and deep acceptors as well as the concentration of the compensating donors were estimated. |
||||||
Cuvinte-cheie Disilicides, iron, Seebeck effect |
||||||
|
Google Scholar Export
<meta name="citation_title" content="Hole Mobility in Cr-Doped p-Type β-FeSi2 Single Crystals"> <meta name="citation_author" content="Arushanov Ernest"> <meta name="citation_author" content="Tomm Yvonnne"> <meta name="citation_author" content="Ivanenko L."> <meta name="citation_author" content="Lange Horst"> <meta name="citation_publication_date" content="1998/11/01"> <meta name="citation_journal_title" content="Physica Status Solidi (B) Basic Research"> <meta name="citation_firstpage" content="187"> <meta name="citation_lastpage" content="194"> <meta name="citation_pdf_url" content="https://ibn.idsi.md/sites/default/files/imag_file/Hole%20Mobility%20in%20Cr-Doped%20p-Type%20b-FeSi2%20Single%20Crystals.pdf">