| Conţinutul numărului revistei |
| Articolul precedent |
| Articolul urmator |
 132 0 |
 SM ISO690:2012GUK, Maxim, CABALLERO, Raquel, LISUNOV, Konstantin, LÓPEZ, Nair, ARUSHANOV, Ernest, MERINO, Jose Manuel, LEON, Maximo. Disorder and variable-range hopping conductivity in Cu 2ZnSnS4 thin films prepared by flash evaporation and post-thermal treatment. In: Journal of Alloys and Compounds, 2014, vol. 596, pp. 140-144. ISSN 0925-8388. DOI: https://doi.org/10.1016/j.jallcom.2014.01.177 |
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  Journal of Alloys and Compounds |
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| Volumul 596 / 2014 / ISSN 0925-8388 | ||||||
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| DOI:https://doi.org/10.1016/j.jallcom.2014.01.177 | ||||||
| Pag. 140-144 | ||||||
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Resistivity, ρ(T), of as-grown and annealed Cu2ZnSnS 4 films, obtained by flash evaporation, is investigated between T ∼ 10 and 300 K. A correlation between the transport properties and the growth conditions of the thin films is also explored. The behavior of ρ(T) in the as-grown films exhibits a close proximity to the metal-insulator transition (MIT), whereas annealing shifts the material from the MIT towards an insulating side. This is attributable to an increased microscopic lattice disorder, which is substantiated by the analysis of the Mott variable-range hopping conductivity observed up to T ∼ 220-280 K (120-180 K) in the as-grown (annealed) films. An increased width of the acceptor band, a decreased relative acceptor concentration, N/Nc and lower values of the mean density of the localized states, g, are obtained after annealing. |
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| Cuvinte-cheie Acceptor band, Cu2ZnSnS4, Flash evaporation, Hopping conductivity, kesterite, solar cell |
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