Exciton spectra and energy band structure of Cu2ZnSiSe4
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GUK, Maxim, LEVCENKO, Sergiu, DERMENJI, Lazari, GURIEVA, Galina, SCHORR, S., SYRBU, Nicolae, ARUSHANOV, Ernest. Exciton spectra and energy band structure of Cu2ZnSiSe4. In: Journal of Alloys and Compounds, 2014, vol. 587, pp. 393-397. ISSN 0925-8388. DOI: https://doi.org/10.1016/j.jallcom.2013.10.172
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Journal of Alloys and Compounds
Volumul 587 / 2014 / ISSN 0925-8388

Exciton spectra and energy band structure of Cu2ZnSiSe4

DOI:https://doi.org/10.1016/j.jallcom.2013.10.172

Pag. 393-397

Guk Maxim1, Levcenko Sergiu2, Dermenji Lazari1, Gurieva Galina2, Schorr S.32, Syrbu Nicolae4, Arushanov Ernest1
 
1 Institute of Applied Physics, Academy of Sciences of Moldova,
2 Helmholtz-Centre Berlin for Materials and Energy,
3 Free University of Berlin, Germany,
4 Technical University of Moldova
 
 
Disponibil în IBN: 7 septembrie 2023


Rezumat

Exciton spectra are studied in Cu2ZnSiSe4 single crystals at 10 and 300K by means of reflection spectroscopy. The exciton parameters, dielectric constant and free carriers effective masses are deduced from experimental spectra by calculations in the framework of a model taking into account the spatial dispersion and the presence of a dead-layer. The structure found in the reflectivity was analyzed and related to the theoretical electronic band structure of close related Cu2ZnSiS4 semiconductor.