Sharp variations in the temperature dependence of optical reflectivity from AlN/GaN heterostructures
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URSACHI, Veaceslav, TIGINYANU, Ion, SYRBU, Nicolae, ZALAMAI, Victor, HUBBARD, Seth M., PAVLIDIS, Dimitris. Sharp variations in the temperature dependence of optical reflectivity from AlN/GaN heterostructures. In: Semiconductor Science and Technology, 2003, vol. 18, pp. 9-11. ISSN 0268-1242. DOI: https://doi.org/10.1088/0268-1242/18/2/101
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Semiconductor Science and Technology
Volumul 18 / 2003 / ISSN 0268-1242

Sharp variations in the temperature dependence of optical reflectivity from AlN/GaN heterostructures

DOI:https://doi.org/10.1088/0268-1242/18/2/101

Pag. 9-11

Ursachi Veaceslav12, Tiginyanu Ion12, Syrbu Nicolae12, Zalamai Victor12, Hubbard Seth M.3, Pavlidis Dimitris3
 
1 Institute of Applied Physics, Academy of Sciences of Moldova,
2 Technical University of Moldova,
3 University of Michigan
 
 
Disponibil în IBN: 31 august 2023


Rezumat

Sharp variations in optical reflectivity were observed when cooling and heating AlN/GaN heterostructures on sapphire substrates between room temperature and 10 K. The reflectivity was found to decrease at a definite temperature Tk in the downward temperature run, and to recover at Tr > Tk in the subsequent upward temperature run. The temperature behaviour of reflectivity exhibits memory on the cooling-heating cycles previously subjected to samples.

Cuvinte-cheie
Aluminum nitride, cooling, Gallium nitride, heating, Light reflection, Optoelectronic devices, Thermal effects

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