| Conţinutul numărului revistei |
| Articolul precedent |
| Articolul urmator |
 92 0 |
 SM ISO690:2012KOROTCHENKOV, Ghenadii, MICHAILOV, Victor. Diffusion processes at the W-InP interface. In: Semiconductor Science and Technology, 1996, vol. 11, pp. 1402-1404. ISSN 0268-1242. DOI: https://doi.org/10.1088/0268-1242/11/10/008 |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
  Semiconductor Science and Technology |
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| Volumul 11 / 1996 / ISSN 0268-1242 | ||||||
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| DOI:https://doi.org/10.1088/0268-1242/11/10/008 | ||||||
| Pag. 1402-1404 | ||||||
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| Rezumat | ||||||
In this paper we present the results of analysis of the electrophysical characteristics of W-n-InP contacts and of Auger spectra and Auger profiles of W-InP structures both before and after heat treatment. The mechanism of interface diffusion as well as the parameters necessary for its description were determined. |
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| Cuvinte-cheie Annealing, Auger electron spectroscopy, Current voltage characteristics, deposition, diffusion, Electric properties, Electron beams, evaporation, Interfaces (materials), physical properties, Semiconducting indium phosphide, tungsten |
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