Mirror temperature of a semiconductor diode laser studied with a photothermal deflection method

Bertolotti Mario; Liakhou Gregory; Li Voti Roberto; Peng Wang Ruo; Sibilia Concita; Yacovlev Vladimir

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BERTOLOTTI, Mario, LIAKHOU, Gregory, LI VOTI, Roberto, PENG WANG, Ruo, SIBILIA, Concita, YACOVLEV, Vladimir. Mirror temperature of a semiconductor diode laser studied with a photothermal deflection method. In: Journal of Applied Physics, 1993, vol. 74, pp. 7054-7060. ISSN 0021-8979. DOI: https://doi.org/10.1063/1.355019

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Journal of Applied Physics

Volumul 74 / 1993 / ISSN 0021-8979 /ISSNe 1089-7550

Mirror temperature of a semiconductor diode laser studied with a photothermal deflection method

DOI:https://doi.org/10.1063/1.355019

Pag. 7054-7060

Bertolotti Mario¹, Liakhou Gregory², Li Voti Roberto¹, Peng Wang Ruo³, Sibilia Concita¹, Yacovlev Vladimir²

¹ Sapienza University of Rome,
² Technical University of Moldova,
³ Peking University, Beijing

Disponibil în IBN: 31 iulie 2023

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Rezumat

The mirror temperature response of a diode laser to injection current is studied through the photodeflection method. A theoretical model is presented together with some experimental measurements. Theoretical results are compared with experimental measurements for an AlGaAs quantum well laser diode.

Cuvinte-cheie
Engineering controlled terms Boundary conditions, Calculations, current density, Fourier transforms, Helium neon lasers, numerical analysis, refractive index, Temperature distribution, Thermal diffusion Engineering uncontrolled terms Angular deviation, Injection currents, Mirror temperature, monocrystals, Photothermal deflection method, Temperature rise Engineering main heading Semiconductor lasers