Porous morphologies in Si, III-V and II-VI compounds: a comparative study

Langa Angela; Monaico Eduard; Foll Helmut; Tiginyanu Ion

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SM ISO690:2012

LANGA, Angela, MONAICO, Eduard, FOLL, Helmut, TIGINYANU, Ion. Porous morphologies in Si, III-V and II-VI compounds: a comparative study. In: Microelectronics and Computer Science: The 6th International Conference, Ed. 6, 1-3 octombrie 2009, Chisinau. Bălți, Republica Moldova: Universitatea de Stat „Alecu Russo" din Bălţi, 2009, Ediţia 6, pp. 175-179. ISBN 978-9975-45-122-2.

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Microelectronics and Computer Science
Ediţia 6, 2009

Conferința "Microelectronics and Computer Science"
6, Chisinau, Moldova, 1-3 octombrie 2009

Porous morphologies in Si, III-V and II-VI compounds: a comparative study

Pag. 175-179

Langa Angela¹, Monaico Eduard¹, Foll Helmut², Tiginyanu Ion¹³

¹ Technical University of Moldova,
² Christian-Albrechts University of Kiel,
³ Institute of Electronic Engineering and Industrial Technologies, Academy of Sciences of Moldova

Disponibil în IBN: 11 iulie 2023

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Rezumat

Porous morphologies obtained during the anodization of semiconductors are mainly determined by particular characteristics of the semiconductor-electrolyte interfaces and the bulk properties of the semiconductor itself. This paper discusses the types of porous structures obtained in Si, III-V and II-VI semiconductors: crystallographically oriented pores, current line oriented pores and fractal pores.