Photoluminescence of ZnTe nanowires prepared by electrochemical etching of bulk ZnTe

Monaico Eduard; Coseac Valeriu; Ursaki Veaceslav; Syrbu Nicolae; Tiginyanu Ion

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MONAICO, Eduard, COSEAC, Valeriu, URSAKI, Veaceslav, SYRBU, Nicolae, TIGINYANU, Ion. Photoluminescence of ZnTe nanowires prepared by electrochemical etching of bulk ZnTe. In: Microelectronics and Computer Science: The 6th International Conference, Ed. 6, 1-3 octombrie 2009, Chisinau. Bălți, Republica Moldova: Universitatea de Stat „Alecu Russo" din Bălţi, 2009, Ediţia 6, pp. 150-153. ISBN 978-9975-45-122-2.

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Microelectronics and Computer Science
Ediţia 6, 2009

Conferința "Microelectronics and Computer Science"
6, Chisinau, Moldova, 1-3 octombrie 2009

Photoluminescence of ZnTe nanowires prepared by electrochemical etching of bulk ZnTe

Pag. 150-153

Monaico Eduard¹ , Coseac Valeriu², Ursaki Veaceslav³, Syrbu Nicolae¹, Tiginyanu Ion¹⁴

¹ Technical University of Moldova,
² Academy of Transport, Informatics, and Communications,
³ Institute of Applied Physics,
⁴ Institute of the Electronic Engineering and Nanotechnologies "D. Ghitu"

Teze de doctorat:

Raportat: Micro- și nano-ingineria compușilor semiconductori și a structurilor metalice în baza tehnologiilor electrochimice

Disponibil în IBN: 11 iulie 2023

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We demonstrate the preparation of ZnTe nanowires with the diameter of 50 nm from bulk p-type ZnTe by means of electrochemical treatment in a pulse regime. The nanowires demonstrate photoluminescence characteristics identical to those of the initial bulk material. The luminescence is shown to come from recombination of excitons bound to an acceptor and from recombination of two types of donor-acceptor pairs involving a shallow acceptor and two species of donors, one of which is shallow, and another one is deep. Since the initial crystals are doped with Na, it is suggested that the acceptor involved in all these three transitions is related to Na.