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 SM ISO690:2012SHISHIYANU, Sergiu, GUEORGUIEV, Valentin, YILMAZ, Ercan, TURAN, Rasit, SHISHIYANU, Teodor. Effects of γ – irradiation on ZrO2 properties. In: Microelectronics and Computer Science: The 6th International Conference, Ed. 6, 1-3 octombrie 2009, Chisinau. Bălți, Republica Moldova: Universitatea de Stat „Alecu Russo" din Bălţi, 2009, Ediţia 6, pp. 115-117. ISBN 978-9975-45-122-2. |
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| Microelectronics and Computer Science Ediţia 6, 2009 |
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Conferința "Microelectronics and Computer Science" 6, Chisinau, Moldova, 1-3 octombrie 2009 | ||||||
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| Pag. 115-117 | ||||||
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The effects of γ – irradiation on the physical and electrical properties of ZrO2-based high-k MOS structures were studied. The doses of γ –irradiation applied have been up to 80 Gray. The C-V characteristics seeing as the flat-band shift when exposed to γ – irradiation showed high sensitivity. Raman scattering measurements of the undoped ZrO2 thin films grown by RF magnetron sputtering on silicon substrate have been investigated. The impact of γ –irradiation doses on the ZrO2 thin films Raman spectra was analyzed. The intensity of the Raman signal originating from monoclinic ZrO2 is found to decrease with increasing gamma radiation. We also observed peak shift with the gamma radiation dose. |
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| Cuvinte-cheie ZrO2, Gamma rays, MOS structure, Raman |
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