Spin properties of quantum wells with magnetic barriers. II. Inverted band ordering and spin polarized interface states

Malkova Natalia; Ekenberg Ulf A.

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MALKOVA, Natalia, EKENBERG, Ulf A.. Spin properties of quantum wells with magnetic barriers. II. Inverted band ordering and spin polarized interface states. In: Physical Review B - Condensed Matter and Materials Physics, 2002, vol. 66, pp. 1553251-1553258. ISSN 1098-0121.

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Physical Review B - Condensed Matter and Materials Physics

Volumul 66 / 2002 / ISSN 1098-0121 /ISSNe 1550-235X

Spin properties of quantum wells with magnetic barriers. II. Inverted band ordering and spin polarized interface states

Pag. 1553251-1553258

Malkova Natalia¹², Ekenberg Ulf A.²

¹ Institute of Applied Physics, Academy of Sciences of Moldova,
² Royal Institute of Tehcnology

Disponibil în IBN: 7 iulie 2023

Rezumat

The electronic band-edge spectrum of the interface states in the magnetic semiconductor quantum wells based on narrow-gap semiconductors with mutually inverted band arrangement is studied within the envelope-function formalism. Interface states are shown to appear in these structures in the case of overlapping bulk bands of the constituents. The hybridization between the bare sp-electron states and the d states of the Mn atoms leads to spin splitting. The spin-splitting effect of the interface states as a function of external magnetic field, well width, band offsets, and fraction of the magnetic atoms, is studied. One essential result is that one can design a structure where the states localized at the interfaces only have one spin direction. The results give evidence of the perspective for using the magnetic semiconductor structures in spin electronics.

Cuvinte-cheie
article, electron, energy, magnetic field, mathematical analysis, model, quantum mechanics, Quantum well, semiconductor

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