| Conţinutul numărului revistei |
| Articolul precedent |
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 SM ISO690:2012ARUSHANOV, Karen A., LISUNOV, Konstantin, MALANG, U., KLOC, Christian L., BUCHER, Ernst. Negative magnetoresistance in-type single crystals in two regimes of variable-range hopping. In: Physical Review B - Condensed Matter and Materials Physics, 1997, vol. 56, pp. 1005-1008. ISSN 1098-0121. DOI: https://doi.org/10.1103/PhysRevB.56.1005 |
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 Physical Review B - Condensed Matter and Materials Physics |
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| Volumul 56 / 1997 / ISSN 1098-0121 /ISSNe 1550-235X | ||||||
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| DOI:https://doi.org/10.1103/PhysRevB.56.1005 | ||||||
| Pag. 1005-1008 | ||||||
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| Rezumat | ||||||
Single crystals of (Formula presented)-type (Formula presented)-FeSi(Formula presented) demonstrate the negative magnetoresistance below 40 K that increases with decreasing temperature and does not reach either a maximum or a saturation up to at least 12 kOe. This effect is observed in both the Mott and the Shklovskii-Efros variable-range hopping regimes. At fields below approximately 3-5 kOe (depending on the temperature) the magnetoresistance displays a quadratic dependence on the magnetic field, while at higher fields the dependence is linear. The experimental data are analyzed using two different approaches to the interference effects in hopping conductivity in a magnetic field. |
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| Cuvinte-cheie conductivity, Aluminum Gallium Arsenides, Metal-insulator transition |
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