| Conţinutul numărului revistei |
| Articolul precedent |
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 SM ISO690:2012PURICA, Munitzer, BUDIANU, Elena, RUSU, Emil. Heterojunction with ZnO polycrystalline thin films for optoelectronic devices applications. In: Microelectronic Engineering, 2000, vol. 51, pp. 425-431. ISSN -. DOI: https://doi.org/10.1016/S0167-9317(99)00492-X |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
  Microelectronic Engineering |
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| Volumul 51 / 2000 / ISSN - /ISSNe 0167-9317 | ||||||
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| DOI:https://doi.org/10.1016/S0167-9317(99)00492-X | ||||||
| Pag. 425-431 | ||||||
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Thin films of ZnO were deposited by thermal decomposition of Zn(C5H7O2)2 on semiconductor substrate, n-type silicon, p-type InP and also on transparent glass substrate. The obtained ZnO/Si and ZnO/InP heterostructures were investigated for optical properties by spectrophotometry and surface morphology by AFM. The measured values of optoelectrical parameters in the visible spectral range and the lateral photovoltage characteristics demonstrate the possibility of using ZnO/n-Si and ZnO/p-InP heterojunctions for photodetection and photovoltaic devices applications. |
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| Cuvinte-cheie Engineering controlled terms Heterojunctions, morphology, photodetectors, Polycrystalline materials, pyrolysis, Semiconducting glass, Semiconducting indium phosphide, Semiconducting silicon, spectrophotometry, Substrates, surfaces, Zinc oxide Engineering uncontrolled terms Glass substrate, Photovoltaic devices, Semiconductor substrate Engineering main heading Thin films |
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