Conţinutul numărului revistei |
Articolul precedent |
Articolul urmator |
118 0 |
SM ISO690:2012 FOLL, Helmut, LANGA, Sergiu, CARSTENSEN, Juergen, CHRISTOPHERSEN, Marc, TIGINYANU, Ion. Pores in III-V semiconductors. In: Advanced Materials, 2003, vol. 15, pp. 183-198. ISSN 0935-9648. DOI: https://doi.org/10.1002/adma.200390043 |
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Advanced Materials | ||||||
Volumul 15 / 2003 / ISSN 0935-9648 /ISSNe 1521-4095 | ||||||
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DOI:https://doi.org/10.1002/adma.200390043 | ||||||
Pag. 183-198 | ||||||
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Rezumat | ||||||
The paper reviews electrochemically etched pores in III-V compound semiconductors (GaP, InP, GaAs) with emphasis on nucleation and formation mechanisms, pore geometries and morphologies, and to several instances of self-organization. Self-organization issues include the formation of single-crystalline two-dimensional hexagonal arrays of pores with lattice constants as small as 100 nm found in InP, synchronized and unsynchronized diameter oscillations coupled to current and voltage oscillations, and pore domain formation. The findings are discussed in relation to pores observed in silicon. Some novel properties of the porous layers obtained in III-V compounds are briefly described. |
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Cuvinte-cheie Engineering controlled terms:, cathodoluminescence, etching, Lattice constants, light scattering, morphology, Nucleation, optical properties, photoluminescence, Pore size, porous materials, single crystals, Engineering uncontrolled terms:, Electrochemical etching, Pore domain formation, self-organization, Voltage oscillations, Engineering main heading:, Semiconductor materials |
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