Micro-Raman-scattering study of surface-related phonon modes in porous GaP
Închide
Conţinutul numărului revistei
Articolul precedent
Articolul urmator
149 0
SM ISO690:2012
TIGINYANU, Ion, IRMER, Gert, MONECKE, Jochen. Micro-Raman-scattering study of surface-related phonon modes in porous GaP. In: Physical Review B - Condensed Matter and Materials Physics, 1997, vol. 55, pp. 6739-6742. ISSN 1098-0121. DOI: https://doi.org/10.1103/PhysRevB.55.6739
EXPORT metadate:
Google Scholar
Crossref
CERIF

DataCite
Dublin Core
Physical Review B - Condensed Matter and Materials Physics
Volumul 55 / 1997 / ISSN 1098-0121 /ISSNe 1550-235X

Micro-Raman-scattering study of surface-related phonon modes in porous GaP

DOI:https://doi.org/10.1103/PhysRevB.55.6739

Pag. 6739-6742

Tiginyanu Ion1, Irmer Gert2, Monecke Jochen2
 
1 Institute of Applied Physics, Academy of Sciences of Moldova,
2 Institut für Theoretische Physik, TU Bergakademie Freiberg
 
 
Disponibil în IBN: 24 iunie 2023


Rezumat

Porous GaP layers prepared by electrochemical dissolution of (100)-oriented bulk material have been studied by micro-Raman spectroscopy. The anodization causes a breakdown of the polarization selection rules, inherent to a (100) surface, accompanied by a downward shift of the LO-phonon frequency and by the appearance of a surface-related vibrational mode in the gap between the bulk optical phonons. The frequency of the surface-related mode was found to decrease from 398 to 394.3 (Formula presented) with increasing anodization current. A Raman line-shape analysis based on the light scattering due to the electro-optic and deformation potential mechanisms is presented.

Cuvinte-cheie
Electrochemical etching, III-V semiconductors, Indium Phosphides