Conţinutul numărului revistei |
Articolul precedent |
Articolul urmator |
201 0 |
SM ISO690:2012 SCHON, Jan Hendrik, OESTREICH, J., SCHENKER, O., RIAZI-NEJAD, H., KLENK, M., FABRE, Norbert, ARUSHANOV, Ernest, BUCHER, Ernst. n-type conduction in Ge-doped CuGaSe2. In: Applied Physics Letters, 1999, vol. 75, pp. 2969-2971. ISSN 0003-6951. DOI: https://doi.org/10.1063/1.125204 |
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Applied Physics Letters | ||||||
Volumul 75 / 1999 / ISSN 0003-6951 /ISSNe 1077-3118 | ||||||
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DOI:https://doi.org/10.1063/1.125204 | ||||||
Pag. 2969-2971 | ||||||
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Rezumat | ||||||
In order to prepare n-type CuGASe2 as-grown, p-type CuGaSe2 single crystals were at first doped by Ge implantation. Thermal healing of the implantation damage in vacuum resulted in strong electrical compensation of the material, but not in n-type conduction. This limitation was overcome by annealing of implanted samples in Zn atmosphere, resulting in n-type conduction of CuGaSe2 with a carrier concentration at room temperature of up to 1016 cm-3. The samples were analyzed by photoluminescence, resistivity, and Hall effect measurements. It was found that the Zn-Ge codoping minimizes the formation of Cu vacancies, which act as acceptor levels and lead to self-compensation, by the formation of ZnCu defects. Furthermore, the number of electrically active Ge dopants is increased by a rise of the GeGa concentration compared to the GeCu defect density. The possibility of n-type conduction in Ga-rich CuIn1 - x GaxSe2 compounds opens the possibility of the preparation of homojunction photovoltaic devices and might lead to improved solar cell performance of large band-gap chalcopyrites. |
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Cuvinte-cheie Thin film solar cells, copper, Chalcopyrite |
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