Ion implantation as a tool for controlling the morphology of porous gallium phosphide

Tiginyanu Ion; Schwab Claude R.; Grob Jean Jacques R.; Prevot Bernard; Hartnagel Hans Ludwig; Vogt Alexander; Irmer Gert; Monecke Jochen

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TIGINYANU, Ion, SCHWAB, Claude R., GROB, Jean Jacques R., PREVOT, Bernard, HARTNAGEL, Hans Ludwig, VOGT, Alexander, IRMER, Gert, MONECKE, Jochen. Ion implantation as a tool for controlling the morphology of porous gallium phosphide. In: Applied Physics Letters, 1997, vol. 71, pp. 3829-3831. ISSN 0003-6951. DOI: https://doi.org/10.1063/1.120518

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Applied Physics Letters

Volumul 71 / 1997 / ISSN 0003-6951

Ion implantation as a tool for controlling the morphology of porous gallium phosphide

DOI:https://doi.org/10.1063/1.120518

Pag. 3829-3831

Tiginyanu Ion¹², Schwab Claude R.³, Grob Jean Jacques R.³, Prevot Bernard³, Hartnagel Hans Ludwig¹, Vogt Alexander⁴, Irmer Gert⁵, Monecke Jochen⁵

¹ Technical University Darmstadt,
² Institute of Applied Physics, Academy of Sciences of Moldova,
³ PHASE laboratory, CNRS UPR No. 292, Strasbourg,
⁴ Darmstadt University of Technology,
⁵ Institut für Theoretische Physik, TU Bergakademie Freiberg

Disponibil în IBN: 16 iunie 2023

Rezumat

We investigate the morphology of porous layers obtained by electrochemical anodization of (100)-oriented n-type GaP substrates before and after a preliminary 5-MeV Kr⁺ implantation. Apart from favoring the observation of a surface-related phonon in the frequency gap between the bulk optical phonons, ion implantation appears to be an effective means of controlling the morphology of porous GaP, irrespective of initial substrate material features.

Cuvinte-cheie
Electrochemical etching, III-V semiconductors, Indium Phosphides