Second harmonic generation (SHG) of a high intensity was found in MoS₂ flakes of different thicknesses exfoliated on a silicon substrate. Reduction of the SHG intensity was observed only for a small portion of flakes, for both very thin and quite thick ones. This was attributed to the presence of polytypism, i.e., of 3R non-centrosymmetric and 2H centrosymmetric polytypes, in a source bulk crystal grown by the chemical vapor transport technique. The presence of two polytypes in the sample was confirmed by the spectral structure of the photoluminescence of bound excitons observed in flakes at low temperature. Absolute values of nonlinear susceptibility of MoS₂ flakes of different thicknesses were estimated.