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 SM ISO690:2012RUSANOVSCHI, Vitalie, AVRAM, Adrian Adrian. Numeric modeling and analytical solution of ionizing irradiation induced charge in MOSFET structure oxide. In: Symposium on Electronics and Telecommunications: ISETC 2014, Ed. 11, 14-15 noiembrie 2014, Timisoara. New Jersey: Institute of Electrical and Electronics Engineers Inc., 2015, Ediția 11, p. 0. ISBN 978-147997265-4. DOI: https://doi.org/10.1109/ISETC.2014.7010739 |
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 Symposium on Electronics and Telecommunications Ediția 11, 2015 |
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Simpozionul "11th International Symposium on Electronics and Telecommunications" 11, Timisoara, Romania, 14-15 noiembrie 2014 | ||||||
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| DOI:https://doi.org/10.1109/ISETC.2014.7010739 | ||||||
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Generally, numeric modeling of induced charge MOS oxide is hard to determine. The main problems that appear consist in difficulty of verifying the results of calculation errors due to mathematical modeling. In this paper is proposed a method to solve the system equation that describes charge induced in MOS structures under ionizing irradiation process. |
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| Cuvinte-cheie Charge accumulation, Ionizing irradiation, modeling, MOS structures |
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