Temperature control of crystalline status and phenomenological modes
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ROŞCA, Tudor, BAZGAN, Sergiu, DORCIOMAN, Gabriela, RISTOSCU, Carmen, POPESCU-PELIN, Gianina, ENAKI, Nicolae, MIHĂILESCU, Ion. Temperature control of crystalline status and phenomenological modes. In: Romanian Reports in Physics, 2016, vol. 68, pp. 241-248. ISSN 1221-1451.
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Romanian Reports in Physics
Volumul 68 / 2016 / ISSN 1221-1451

Temperature control of crystalline status and phenomenological modes


Pag. 241-248

Roşca Tudor1, Bazgan Sergiu1, Dorcioman Gabriela2, Ristoscu Carmen2, Popescu-Pelin Gianina2, Enaki Nicolae1, Mihăilescu Ion2
 
1 Institute of Applied Physics, Academy of Sciences of Moldova,
2 National Institute for Laser, Plasma and Radiation Physics (INFLPR)
 
 
Disponibil în IBN: 14 ianuarie 2023


Rezumat

A phenomenological model describing the nonlinear process of the growth of Ti and TiO2 films on Si or SiO2 substrates is proposed. It is considered that bound electrons from the Si surface are coupled with energy inferior to that of the electrons in the bulk of the Si substrate. The transition from crystalline to vitreous phase in the deposited films is analyzed based upon the nonlinear theory of phase transitions. 

Cuvinte-cheie
Crystalline status control, Surface functionalization with proteins, TiO2 thin films