Chalcogenide glasses are attractive materials due to its application in photonics and optoelectronics. Chalcogenide glasses Ge_xAs_xSe_1-2x (average coordination number Z=2.15÷2.90) and (As₄S₃Se₃)_1-xSn_x (average coordination number Z=2.4÷2.56), which contain elements of IV group of the Periodic Table, such as Ge and Sn are important for a wide range of technical applications, such as infrared optical elements, acousto-optic and alloptical switching devices, holographic recording media, diffractive optics, photonic crystals, etc. [1, 2]. Raman spectroscopy is an efficient method for obtaining information on the local structure of the disordered material, especially when the composition is varied. In this paper are reported the Micro-Raman spectra of Ge_xAs_xSe_1-2x and (As₄S₃Se₃)_1-xSn_x bulk glasses and amorphous thin films. The Micro-Raman spectra of bulk glasses and thermally deposited amorphous (As₄S₃Se₃)_1-xSn_x thin films consist of two broad bands located at around ν=236 cm^-1 and ν=345 cm^-1, which corresponds to the symmetric stretching vibration modes of AsSe_3/2 and AsS_3/2 pyramids, respectively. Tin impurities didn't change the shape of Micro-Raman spectra, but shift the both bands to low frequency region. The Micro-Raman spectra of bulk glasses and thermally deposited amorphous (Ge_xAs_xSe_1-2xthin films consist of one main vibration band located at around ν=246 cm^-1 for lower concentration of Ge and As, and is attributed to (AsSe_1/2)₃ pyramidal units. With increasing of Ge and As concentrations this band shifts to lower frequency region up to ν=236 cm^-1 for x=0.30. The vibration band situated around ν=205 cm^-1 is attributed to Ge(Se_1/2)₄ tetrahedral units and increase in the intensity with increasing of Ge and As concentrations. Some shoulders in high frequency regions at ν=365-390 cm^-1 and ν=500-530 cm^-1, caused by the presence of As-Se bands and Se-Se chains also was observed