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<resource xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xmlns='http://datacite.org/schema/kernel-3' xsi:schemaLocation='http://datacite.org/schema/kernel-3 http://schema.datacite.org/meta/kernel-3/metadata.xsd'>
<creators>
<creator>
<creatorName>Iaseniuc, O.V.</creatorName>
<affiliation>Institutul de Fizică Aplicată, Moldova, Republica</affiliation>
</creator>
<creator>
<creatorName>Iovu, M.S.</creatorName>
<affiliation>Institutul de Fizică Aplicată, Moldova, Republica</affiliation>
</creator>
</creators>
<titles>
<title xml:lang='en'>Characterization of some optical and physical properties of As11.2S48.0Sb28.8Te12.0 and As20.8S48.0Sb19.2Te12.0 nanostructured polycrystalline semiconductors</title>
</titles>
<publisher>Instrumentul Bibliometric National</publisher>
<publicationYear>2022</publicationYear>
<relatedIdentifier relatedIdentifierType='ISSN' relationType='IsPartOf'>1584-8663</relatedIdentifier>
<subjects>
<subject>Nanostructured polycrystalline semiconductors</subject>
<subject>Optical transmission</subject>
<subject>photoconductivity</subject>
<subject>X-ray diffraction patterns</subject>
<subject>X-ray fluorescence analysis</subject>
</subjects>
<dates>
<date dateType='Issued'>2022-02-01</date>
</dates>
<resourceType resourceTypeGeneral='Text'>Journal article</resourceType>
<descriptions>
<description xml:lang='en' descriptionType='Abstract'><p>This work presents the characterization of As-S-Sb-Te nanostructured polycrystalline semiconductors by X-ray fluorescence (XRF), X-ray diffraction (XRD), electron microscopy (SEM), optical as well as photoelectric methods. The XRD patterns have been shown the presence of amorphous and nanocrystalline phases with the main structural units As<sub>2</sub>S<sub>3</sub>, Sb<sub>2</sub>S<sub>3</sub>&nbsp;and Sb<sub>2</sub>Те<sub>3</sub>. The IR transmission spectra show a high transparence just with a single weak absorption band about &nu;=2340 cm<sup>-1</sup>&nbsp;caused of the presence of H<sub>2</sub>S impurity. It was also observed that for the alloys of As<sub>11.2</sub>S<sub>48.0</sub>Sb<sub>28.8</sub>Te<sub>12.0</sub>&nbsp;and As<sub>20.8</sub>S<sub>48.0</sub>Sb<sub>19.2</sub>Te<sub>12.0</sub>, with an increase in the number of As atoms, the transmission in the IR region also increase. The maximum of steady-state photoconductivity for both materials, measured in the linear portion of I-V characteristics, is situated around &lambda;=0.96 &mu;m.</p></description>
</descriptions>
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<format>uri</format>
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</resource>