Acţiunea iradierii ionizante asupra oxidului structurilor MOS
Închide
Conţinutul numărului revistei
Articolul precedent
Articolul urmator
854 2
Ultima descărcare din IBN:
2018-07-18 15:47
Căutarea după subiecte
similare conform CZU
621.315.592:621.382 (3)
Electrotehnică (1155)
SM ISO690:2012
RUSANOVSCHI, Vitalie. Acţiunea iradierii ionizante asupra oxidului structurilor MOS . In: Intellectus, 2002, nr. 4, pp. 58-62. ISSN 1810-7079.
EXPORT metadate:
Google Scholar
Crossref
CERIF

DataCite
Dublin Core
Intellectus
Numărul 4 / 2002 / ISSN 1810-7079 /ISSNe 1810-7087

Acţiunea iradierii ionizante asupra oxidului structurilor MOS
CZU: 621.315.592:621.382

Pag. 58-62

Rusanovschi Vitalie
 
Agentia de Stat pentru Proprietatea Intelectuala a Republicii Moldova (AGEPI)
 
 
Disponibil în IBN: 16 decembrie 2013


Rezumat

T he Integrated Circuits that are under the ionized irradiation influence, widely used in the computer science, require a deep research of the active elements in order to determine the deviation of the parameters of the elements and of the integrated circuits under the ionized irradiation action and to determine the highest level of irradiation under which the elements and the integrated circuits will function constantly.

Dublin Core Export

<?xml version='1.0' encoding='utf-8'?>
<oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'>
<dc:creator>Rusanovschi, V.I.</dc:creator>
<dc:date>2002-12-02</dc:date>
<dc:description xml:lang='en'>T he Integrated Circuits
that are under the ionized
irradiation influence, widely
used in the computer science,
require a deep research of the
active elements in order to
determine the deviation of the
parameters of the elements and
of the integrated circuits under
the ionized irradiation action
and to determine the highest
level of irradiation under
which the elements and the
integrated circuits will function
constantly.</dc:description>
<dc:source>Intellectus  (4) 58-62</dc:source>
<dc:title>Acţiunea iradierii ionizante asupra oxidului structurilor MOS
</dc:title>
<dc:type>info:eu-repo/semantics/article</dc:type>
</oai_dc:dc>