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<creators>
<creator>
<creatorName>Aramă, E.D.</creatorName>
<affiliation>Universitatea de Stat de Medicină şi Farmacie „Nicolae Testemiţanu“, Moldova, Republica</affiliation>
</creator>
<creator>
<creatorName>Pîntea, V.</creatorName>
<affiliation>Universitatea Tehnică a Moldovei, Moldova, Republica</affiliation>
</creator>
<creator>
<creatorName>Şemeacova, T.D.</creatorName>
<affiliation>Institutul de Fizică Aplicată, Moldova, Republica</affiliation>
</creator>
</creators>
<titles>
<title xml:lang='en'>Cathodoluminescence and X-Ray Luminescence of ZnIn2S4 and CdGa2S4 Single Crystals</title>
</titles>
<publisher>Instrumentul Bibliometric National</publisher>
<publicationYear>2021</publicationYear>
<relatedIdentifier relatedIdentifierType='ISBN' relationType='IsPartOf'>978-9975-72-592-7</relatedIdentifier>
<dates>
<date dateType='Issued'>2021</date>
</dates>
<resourceType resourceTypeGeneral='Text'>Conference Paper</resourceType>
<descriptions>
<description xml:lang='en' descriptionType='Abstract'><p>Zinc thioindate and gallium thiogallate single crystals were grown by a chemical vapor transport method. The cathodoluminescence and X-ray luminescence spectra of ZnIn2S4 and CdGa2S4 single crystals were studied. From cathodoluminescence spectra of ZnIn2S4 at low temperatures the forbidden gap width of (2.96 &plusmn; 0.02) eV at 80 K and optical depth of the deep acceptor level EA = (EV + 0.30) eV were determined. In the X-ray luminescence spectra of CdGa2S4 a single emission band is observed with an energy maximum at 2.14 eV and a slope within the high-energy range at approximately 2.34 eV identified as optical transitions of donor-acceptor type.</p></description>
</descriptions>
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<format>application/pdf</format>
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