Characteristics of Surface-Barrier Structures on Zinc Diarsenide with Hole Conductivity
Închide
Articolul precedent
Articolul urmator
272 1
Ultima descărcare din IBN:
2021-12-02 11:17
SM ISO690:2012
STAMOV, Ivan, TKACHENKO, D., STREL’CHUK, Yu.. Characteristics of Surface-Barrier Structures on Zinc Diarsenide with Hole Conductivity. In: Nanotechnologies and Biomedical Engineering, Ed. 5, 3-5 noiembrie 2021, Chişinău. Chişinău: Pontos, 2021, Ediția 5, p. 67. ISBN 978-9975-72-592-7.
EXPORT metadate:
Google Scholar
Crossref
CERIF

DataCite
Dublin Core
Nanotechnologies and Biomedical Engineering
Ediția 5, 2021
Conferința "Nanotechnologies and Biomedical Engineering"
5, Chişinău, Moldova, 3-5 noiembrie 2021

Characteristics of Surface-Barrier Structures on Zinc Diarsenide with Hole Conductivity


Pag. 67-67

Stamov Ivan, Tkachenko D., Strel’chuk Yu.
 
T.G. Shevchenko State University of Pridnestrovie, Tiraspol
 
 
Disponibil în IBN: 16 noiembrie 2021


Rezumat

The surface-barrier photosensitive structures based on zinc diarsenide crystals with metals have been produced. The electrical and photovoltaic properties of these structures were investigated. The photocurrent spectra and electrical characteristics are determined by the parameters of the semiconductor and the physicochemical properties of the contacting metals.