It is known that if necessary the synthesis of bismuth crystals doped with elements IV and VI, when the foreground task of a homogeneous distribution of dopant concentration along the ingot is the most successful method for multiple zone recrystallization [1]. In the manufacture of micro and nanowires in glass insulation, method of casting from the liquid phase, with a high concentration of dopant, the question of the stoichiometry of the samples is extremely important. We obtained the bismuth wires doped with donor impurity Se and Te by liquid phase casting [2], to a concentration of 1.5 at%, i.e. in fact, until the limit of their solubility in Bi. We investigated the temperature dependence R (T) in the temperature range 4,2 K-300 K and ShdH oscillations in the longitudinal (H || I) and transverse (H ^ I) configuration highly doped Bi wires. In wires with a concentration of the dopant over 1.0 at%Se ShdH oscillations were absent. For the homogenization of wires used the method of zone recrystallization multiple. For this purpose, use the plant to a horizontal zone recrystallization, which allows to automatically shift the zone recrystallization from right to left and left to right several times with a given speed. Zone recrystallisation is a heater mounted on a quartz tube diameter of 30-40 mm. The heater creates a zone recrystallization whose width was ≈ 5-6 mm. Motion the heater along doped Bi wire in a glass cover, nested inside a pre-evacuated glass ampoule with the used of a screw mechanism. The screw was set in motion reversing electric motor RD - 09 with the use of additional reducer with replaceable gear, that allowed to receive conveying speed of a zone from 7 mm / h to 0.19 mm / hour. We used the rate of 1.25 mm / hour.figureFig. 1 The field dependence of longitudinal magnetoresistance (H || I) wire Bi -1.0 at%Se till (a) and after (b) zone recrystallization.Figure 1 b. brought to the field dependence of longitudinal magnetoresistance (H || I) of the same filament Bi-1.0at%Se after recrystallization. As seen in figure 1, after recrystallization zone at R (H) are visible Shubnikov de Haas, a significant improvement of quality and structural perfection heavily Bi - Se wires, obtained by casting from the liquid phase. Thus horizontal zone recrystallization method can be successfully applied to the homogenization and improvement of structural perfection heavily nanowires in a glass cover on the basis of semimetals that is essential to use the above wires in the scientific and applied aspects.