Hopping conductivity in Cu2ZnGe1-xSnxSe4 solid solutions
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HAJDEU-CHICAROSH, Elena. Hopping conductivity in Cu2ZnGe1-xSnxSe4 solid solutions. In: Perspectivele şi Problemele Integrării în Spaţiul European al Cercetării şi Educaţiei. Vol.1, 7 iunie 2016, Cahul. Cahul: Centrografic, 2016, pp. 409-412. ISBN 978-9975-914-90-1.
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Perspectivele şi Problemele Integrării în Spaţiul European al Cercetării şi Educaţiei
Vol.1, 2016
Conferința "Perspectivele şi Problemele Integrării în Spaţiul European al Cercetării şi Educaţiei"
Cahul, Moldova, 7 iunie 2016

Hopping conductivity in Cu2ZnGe1-xSnxSe4 solid solutions


Pag. 409-412

Hajdeu-Chicarosh Elena
 
Institute of Applied Physics, Academy of Sciences of Moldova
 
Disponibil în IBN: 30 martie 2021


Rezumat

Resistivity,  (T, x), of Cu2Zn(SnxGe1-x)Se4 (CZTGeSe) single crystals with x = 1, 0.5, 0 exhibits an activated character within the whole investigated temperature range between T ~ 10  320 K, attaining a minimum at x = 0.5. The dependence of  (T) gives evidence for a nearest-neighbor hopping (NNH) conductivity in high-temperature intervals within T ~ 200  320 K depending on x, followed by the Mott variable-range hopping (VRH) charge transfer with lowering temperature. Analysis of the  (T) data has yielded the values of the NNH activation energy and the VRH characteristic temperature, as well as those of the acceptor band width, the acceptor concentration, the localization radii of holes and the density of the localized states (DOS) at the Fermi level. All the parameters above exhibit a systematic non-monotonous dependence on x. the maximum of DOS and of the defect concentration suggests that the composition with x=0.5 corresponds with the highest lattice disorder in the studied samples.